† Corresponding author. E-mail:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51602300 and 51602299) and the National Key Research and Development Program of China (Grant No. 2018FYA0305800).
Uniform mixing of ceramic powder and graphene is of great importance for producing ceramic matrix composite. In this study, graphene nanowalls (GNWs) are directly deposited on the surface of Al2O3 and Si3N4 powders using chemical vapor deposition system to realize the uniform mixing. The morphology and the initial stage of the growth process are investigated. It is found that the graphitic base layer is initially formed parallel to the powder surface and is followed by the growth of graphene nanowalls perpendicular to the surface. Moreover, the lateral length of the graphene sheet could be well controlled by tuning the growth temperature. GNWs/Al2O3 powder is consolidated by using sparking plasma sintering method and several physical properties are measured. Owing to the addition of GNWs, the electrical conductivity of the bulk alumina is significantly increased.
Monolithic ceramics are widely used in the materials industry, including wear-resistance parts, electronics, and various coatings. However, their applications are significantly limited by the brittleness and poor electrical conductance. To overcome these drawbacks, ceramic composites have been developed by incorporating nanofillers into the ceramic matrices.[1–6] Recently, graphene has been widely investigated as a good filler for producing highly tough and stiff ceramic matrix composite (CMC).[7–15] According to the papers reported in this field, the main challenges have been to produce high quality graphene and realize good dispersion of graphene in ceramic matrix. In these studies, ball-milling[7–12] and colloidal processing[13–15] were two mainly used mixing methods. Ball-milling technique imposed heavy shear forces on graphene to break its agglomeration and promote its dispersion. Colloidal processing produced well dispersed mixture usually by adding graphene oxide (GO) dropwise into ceramic suspension under magnetic stirring. However, the severe collision in ball-milling and the oxidation treatment in preparing GO by hummerʼs method would all significantly damage the graphene flakes and give rise to massive structural defects,[16,17] which degraded the physical properties in contrast with pure graphene. To produce high quality CMC, it is necessary to develop a new method to realize better control of the quality of graphene, as well as uniform mixing.
Recent years have witnessed great progress in the growth of graphene nanowalls (GNWs) on arbitrary substrates by employing plasma-enhanced chemical vapor deposition (PECVD) technique.[18–23] This method enables the low-temperature and uniform synthesis of graphene nanosheets owing to the presence of reactive species generated in the plasma region, and the GNWs have been widely used in the aspects of solar cells, supercapacitor, and field emission.[19,20,22] In this study, we aim to utilize PECVD to directly deposit graphene on the surface of ceramic powder, and the morphology and the initial stage of growth process of GNWs have been investigated.
The α -alumina powder (Xilong Scientific Ltd.) with a purity of 99.85% and an average particle size of
Bulk ceramic composite was fabricated using an SPS-1050 T apparatus. The powder was loaded in a cylindrical graphite die with an inner diameter of 40 mm. Two graphite plungers were used to seal the die on both ends. The sintering process was carried out under a vacuum of 5 Pa and a uniaxial pressure of 4 MPa was applied. Samples were heated to 1450 °C at a rate of 10 °C/min. The dwelling time was 5 minutes.
The microstructure of the powder was characterized by scanning electron microscope (SEM, Hitachi S-4800) and high resolution transmission electron microscope (HRTEM, FEI Tecai G2F20). Raman spectrum was recorded on the Horiba Jobin Yvon LabRAM HR-800 with a laser wavelength of 532 nm and an incident power of 1 mW. The x-ray photoelectron spectroscopy (XPS) analysis was carried out on Thermo escalab 250XI, using monochromatized Al Kα radiation at 150 W. The high resolution XPS spectra were recorded in the constant analyzer energy (CAE) mode with a pass energy of 20 eV and a step size of 0.1 eV. The density values were measured using the Archimedes method. Vecker hardness tests were carried out on the Future-Tech with a 100-g force. Keysight 2902A was used to measure the conductivity at 25 °C on a small piece of sample with a size of 8 mm×8 mm×0.5 mm.
Figure
The large-scale SEM image in Fig.
Many efforts have been made to investigate the growth mechanism of GNWs on metallic substrates, such as Cu, Ni, and Pt.[22,23,28] Most of these studies indicated that the growth of GNWs was composed of two stages: initially, the carbon radicals nucleated and massive graphene layers in parallel with substrate took form, following a two-dimensional (2D) growth mode; as the number of layers increased and the strain energy accumulated, 2D layers became energetically unfavorable and a transition to three-dimensional (3D) growth took place. However, few work reported the growth mechanism on the surface of ceramics. To elucidate this issue, the growth process of GNWs is monitored by gradually varying the growth time under otherwise the same condition. Before graphene deposition, the surface of alumina particle has a clean and smooth topography, as shown in the SEM image of Fig.
XPS measurements are also carried out to detect the growth process of GNWs. Before deposition, the bare Al2O3 powder is treated at ambient atmosphere at 800 °C for three hours. Our results indicate that the content of residual amorphous carbon significantly decreases from 12.3 at.% to 7.1 at.% after this treatment. The high-resolution C 1s spectra recorded at different deposition times are presented in Fig.
To elucidate the universality and advantage of our method, we further deposit GNWs on the surface of silicon nitride (Si3N4). As shown in the SEM image of Fig.
The GNWs-Al2O3 powder is sintered by SPS method to fabricate alumina composite. The volume percent of graphene in this sample is about 0.25%. Pure Al2O3 powder is also sintered to bulk monilithic alumina using the same condition for comparison. The composite has a black color, exhibiting a sharp contrast with the white monolithic alumina. Graphene owns exceptional high electrical conductivity and is considered to be an ideal additive to improve this property of ceramic.[7,16,30] We carry out measurements on several physical properties such as bulk density, Vickers hardness, and electrical conductivity. The monilithic alumina and the composite exhibit similar bulk density with the value of 3.899 g/cm3 and 3.918 g/cm3, respectively. These numbers are very close to the ideal value of alumina (3.97 g/cm3), indicating that the sintering parameters used in our experiment are suitable. There are little differences in hardness between the two samples, with the value of 1667 HV and 1652 HV, respectively. However, the addition of graphene could significantly raise the electrical conductivity of alumina. Our experiment results show that the monilithic Al2O3 is an insulator. The graphene sheets in the composite provide numerous conductive paths and sharply increase the electrical conductivity to a value of 0.724 S/m.
GNWs film has been successfully deposited on the surface of Al2O3 and Si3N4 powders. The layers, counted from HRTEM images, imply that the GNWs correspond to few-layer graphene. SEM results indicate that the growth process includes a transition from 2D to 3D mode at the initial stage. The lateral length of graphene sheets could be well controlled by changing the deposition temperature, which is about 70 nm and 150 nm at 700 °C and 600 °C, respectively. Moreover, the electrical conductivity of the composite significantly increases compared with the monilithic alumina. Our experiment provides an alternative way to realize the uniform mixing of graphene and ceramic powders, which has potential applications in fabricating ceramic matrix composites.
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